The indium-antimony-tellurium system

Thermoelectric performance of films in the bismuth-tellurium and antimony-tellurium systems

Coevaporated bismuth-tellurium and antimony-tellurium films were fabricated under various deposition conditions scontrolled evaporation rates of individual species, substrate temperature, and substrate materiald, and their thermoelectric sTEd properties sSeebeck coefficient, electrical resistivity, and carrier concentrationd were measured in search of optimal TE performance. The tellurium atomi...

Discovery of palladium, antimony, tellurium, iodine, and xenon isotopes

Currently, thirty-eight palladium, thirty-eight antimony, thirty-nine tellurium, thirty-eight iodine, and forty xenon isotopes have been observed and the discovery of these isotopes is discussed here. For each isotope a brief synopsis of the first refereed publication, including the production and identification method, is presented. ∗Corresponding author. Email address: [email protected]...

Tellurium and tellurium compounds

The effect of antimony in the growth of indium arsenide quantum dots in gallium arsenide „001..

The effect of an initial saturation coverage of antimony on the growth of indium arsenide quantum dots on gallium arsenide has been studied during metalorganic vapor-phase epitaxy. After depositing one to two bilayers of InAs at 723 K, the samples were quenched, transferred to ultrahigh vacuum, and characterized by scanning tunneling microscopy and x-ray photoelectron spectroscopy. It has been ...

Direct observation of titanium-centered octahedra in titanium-antimony-tellurium phase-change material.

Phase-change memory based on Ti0.4Sb2Te3 material has one order of magnitude faster Set speed and as low as one-fifth of the Reset energy compared with the conventional Ge2Sb2Te5 based device. However, the phase-transition mechanism of the Ti0.4Sb2Te3 material remains inconclusive due to the lack of direct experimental evidence. Here we report a direct atom-by-atom chemical identification of ti...